Gamma radiation response of MWIR and LWIR HgCdTe photodiodes

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6973307

Williams, G M; Vanderwyck, A H.B.; Blazejewski, E R; Ginn, R P; Li, C C; Nelson, S J

This paper describes the results of experimental investigation of the gamma radiation response of HgCdTe photodiodes. The devices were fabricated in material grown by liquid phase epitaxy; the p-n junctions were made by ion implantation and passivated with ZnS. The MWIR devices tested at 120K, showed transient response in reasonable agreement with existing theory and total dose hardness greater than 1 Mrad(Si). The LWIR detectors, tested at 40K, showed a degradation threshold at 1- Krad(H/sub 2/O). This degradation is not a result of surface inversion resulting from charge trapping in the insulator.

• Research Organization: Rockwell International Science Center (US)
• OSTI ID: 6973307
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALLOYS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHANNELING
CHARGED-PARTICLE TRANSPORT
CHEMICAL RADIATION EFFECTS
CHEMISTRY
CURING
DATA
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAMMA RADIATION
INFORMATION
ION CHANNELING
IONIZING RADIATIONS
JUNCTION TRANSISTORS
LIQUID PHASE EPITAXY
MERCURY ALLOYS
NUMERICAL DATA
PHOTODIODES
PHYSICAL RADIATION EFFECTS
RADIATION CHEMISTRY
RADIATION CURING
RADIATION EFFECTS
RADIATION TRANSPORT
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TELLURIDES
TELLURIUM COMPOUNDS
TRANSISTORS
TRAPPING