Electron paramagnetic resonance and capacitance-voltage studies of ultraviolet irradiated Si-SiO sub 2 interfaces

Journal Article · Sun Jul 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347146· OSTI ID:6973109

Brower, K L; Schubert, W K; Seager, C H ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (US)

Electron paramagnetic resonance and capacitance-voltage studies of hydrogen passivated Si-SiO{sub 2} interfaces indicate that UV irradiation of the interface does not result in the creation of new {ital P}{sub {ital b}} centers or interface states providing no photocurrent is allowed to pass through the oxide. This is in contrast to the generally known fact that UV irradiation with photoinjection does form interface states.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6973109
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
ELEMENTS
INTERFACES
MAGNETIC RESONANCE
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
POINT DEFECTS
RADIATIONS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
ULTRAVIOLET RADIATION
VACANCIES