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U.S. Department of Energy
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Uv-induced degradation of the Si-SiO sub 2 interface: Applications to the point contact solar cell

Conference ·
OSTI ID:6758923

Prior research has concentrated on damage at the Si--SiO{sub 2} interface caused by photoinjection of electrons into the oxide by near UV light. The damage processes involved may be similar to those responsible for degradation in the Stanford type, point contact solar cell (PCSC). 7 refs., 6 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6758923
Report Number(s):
SAND-90-1767C; CONF-9008124--1; ON: DE90013843
Country of Publication:
United States
Language:
English