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Title: The effect of ion damage and annealing on superconducting transition metal-nitride compounds

Abstract

Thin films of the B1 phase superconducting compounds vanadium nitride and titanium nitride were formed by heating evaporated pure metal films in high purity nitrogen gas. Resistivity at room and low temperature, superconducting transition temperature T/sub C/, and upper critical field of these films were found to be similar to those in bulk samples. The films were then irradiated with nitrogen ions and the effect of lattice damage determined. The dependence on ion fluence of the residual resistivity and the transition temperature obeyed saturating exponential functions that could be derived from a simple defect production and annealing model. The renormalized electronic density of states N*(O) was calculated as a function of ion fluence, while the band density of states Nb(O) was calculated using the electron lifetime model. The electron-phonon coupling constant was determined from these densities of states and from the McMillan equation for T/sub C/. Results do not agree and spin fluctuations cannot be used to explain the discrepancy. It is argued that some mechanism, other than lifetime reduction of the band density of states, is responsible for the observed effects. This is in contrast to the high temperature A15 superconductors in which the electron lifetime model yields largemore » reductions in Nb(O). It is thought that any other mechanism present in these materials would be overshadowed by this large reduction. Subsequent annealing studies indicate that the radiation damage effects are reversible. Annealing in vacuum at high temperatures results in loss of nitrogen and thus degradation of the properties of the material. It is argued that the bonding in TiN is almost three times stronger than in VN.« less

Authors:
Publication Date:
Research Org.:
Tennessee Univ., Knoxville (USA); Oak Ridge Associated Universities, Inc., TN (USA)
OSTI Identifier:
6973087
Report Number(s):
DOE/OR/00033-T280
ON: DE87005988
DOE Contract Number:  
AC05-76OR00033
Resource Type:
Technical Report
Resource Relation:
Other Information: Thesis. Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; TITANIUM NITRIDES; PHYSICAL RADIATION EFFECTS; VANADIUM NITRIDES; ANNEALING; CRITICAL FIELD; ELECTRON-PHONON COUPLING; ELECTRONIC SPECIFIC HEAT; GINZBURG-LANDAU THEORY; ION BEAMS; NITROGEN IONS; PENETRATION DEPTH; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSITION TEMPERATURE; BEAMS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; HEAT TREATMENTS; IONS; MAGNETIC FIELDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SPECIFIC HEAT; THERMODYNAMIC PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS; 360206* - Ceramics, Cermets, & Refractories- Radiation Effects; 656100 - Condensed Matter Physics- Superconductivity

Citation Formats

Ellis, J T. The effect of ion damage and annealing on superconducting transition metal-nitride compounds. United States: N. p., 1987. Web.
Ellis, J T. The effect of ion damage and annealing on superconducting transition metal-nitride compounds. United States.
Ellis, J T. 1987. "The effect of ion damage and annealing on superconducting transition metal-nitride compounds". United States.
@article{osti_6973087,
title = {The effect of ion damage and annealing on superconducting transition metal-nitride compounds},
author = {Ellis, J T},
abstractNote = {Thin films of the B1 phase superconducting compounds vanadium nitride and titanium nitride were formed by heating evaporated pure metal films in high purity nitrogen gas. Resistivity at room and low temperature, superconducting transition temperature T/sub C/, and upper critical field of these films were found to be similar to those in bulk samples. The films were then irradiated with nitrogen ions and the effect of lattice damage determined. The dependence on ion fluence of the residual resistivity and the transition temperature obeyed saturating exponential functions that could be derived from a simple defect production and annealing model. The renormalized electronic density of states N*(O) was calculated as a function of ion fluence, while the band density of states Nb(O) was calculated using the electron lifetime model. The electron-phonon coupling constant was determined from these densities of states and from the McMillan equation for T/sub C/. Results do not agree and spin fluctuations cannot be used to explain the discrepancy. It is argued that some mechanism, other than lifetime reduction of the band density of states, is responsible for the observed effects. This is in contrast to the high temperature A15 superconductors in which the electron lifetime model yields large reductions in Nb(O). It is thought that any other mechanism present in these materials would be overshadowed by this large reduction. Subsequent annealing studies indicate that the radiation damage effects are reversible. Annealing in vacuum at high temperatures results in loss of nitrogen and thus degradation of the properties of the material. It is argued that the bonding in TiN is almost three times stronger than in VN.},
doi = {},
url = {https://www.osti.gov/biblio/6973087}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {3}
}

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