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The influence of ion-irradiated induced disorder and post-annealing on thin film superconductive compounds MoN, VN, and TiN

Conference ·
OSTI ID:6417540
Thin films of the three superconducting ordered compounds MoN, VN, and TiN have been synthesized by high temperature gas reaction of the pure metal films in a nitrogen-rich atmosphere. X-ray diffraction showed that the as-formed films were single phase, with VN and TiN having the B1 structure and MoN having a modified simple hexagonal structure. Lattice disorder was introduced systematically by irradiation with nitrogen ions of energies 45 and 340 keV, resulting in nearly uniform damage profiles over the film thickness. Both the residual resistivity rho/sub 0/ and the superconducting transition temperature T/sub c/ are exponentially saturating functions of the ion fluence, with decay constants and saturation values that correlate with the relative stabilities of the three materials. Isochronal annealing of the samples in a nitrogen-rich environment results in recovery of the properties. Annealing in vacuum leads to first recovery and then progressive decomposition of the compounds.
Research Organization:
Oak Ridge National Lab., TN (USA); Tennessee Univ., Knoxville (USA). Dept. of Physics; Carleton Coll., Northfield, MN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6417540
Report Number(s):
CONF-8706125-8; ON: DE87012525
Country of Publication:
United States
Language:
English