Nonreflecting vertical junction silicon solar cell optimization. Interim report, May 1976--May 1977

Technical Report · Fri Jul 01 04:00:00 EDT 1977

OSTI ID:6972622

Wohlgemuth, J; Lindmayer, J; Scheinine, A

This work on nonreflective vertical-junction silicon solar cells has resulted in high conversion efficiency radiation resistant solar cells. New techniques of oxidation growth and the use of photolothography enable the use of an orientation dependent etch to produce grooves 5-10 micrometers wide and over 100 micrometers deep. These silicon wafers have been processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. A theoretical calculation of the generated current for the vertical junction structure was performed. It indicates the decreased dependence on carrier diffusion length and, therefore, the reduced effect of radiation damage on collection efficiency for vertical junction solar cells. Vertical junction solar cells 2 cm x 2 cm in size have been fabricated with AMO conversion efficiencies greater than 13%. These cells have shown superior radiation resistance.

• Research Organization: Solarex Corp., Rockville, Md. (USA)
• OSTI ID: 6972622
• Report Number(s): AD-A-046150
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
CHEMICAL REACTIONS
COATINGS
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ETCHING
FABRICATION
OPTIMIZATION
OXIDATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SURFACE FINISHING