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Dielectric measurement of glasses in the In(Ga)-Ge-Se(S)

Journal Article · · Sov. J. Glass Phys. Chem.; (United States)
OSTI ID:6972573

Unlike Tl, In and Ga in their chalcogenide compounds mainly attain a spin valency of three. It is suggested by the authors that these elements enter a glass composition in the form of InX /SUB 3/2/ and GaX /SUB 3/2/ structural unit. For the present study, the authors chose the GeSe/sub 4/-Ga, GeSe/sub 4/-In, GeS/sub 3/-In, and GeS /SUB 1.5/ -In sections since the alloys show the greatest tendency for glass forming along these lines. The glasses were synthesized from simple materials of semiconductor purity. At the maximum synthesis temperature of 950/sup 0/C the melts solidified in 4-8 h. The proposed structure-chemical composition of the experimental glasses and also the equations which determine the concentration of structural unit of each type expressed in terms of the atomic fraction of a group III element are given. The dielectric constant of glasses in the system In(Ga)-Ge-Se(S) at room temperature ove a frequency range of 300-700 kHz is mainly determined by elastic forms of polarization.

Research Organization:
M.I. Kalinin Leningrad Polytechnic Institute
OSTI ID:
6972573
Journal Information:
Sov. J. Glass Phys. Chem.; (United States), Journal Name: Sov. J. Glass Phys. Chem.; (United States) Vol. 10:5; ISSN SJGCD
Country of Publication:
United States
Language:
English