Electron transfer rates in highly exothermic reactions on semiconductor electrolyte interfaces, and the deuterium isotope effect

Journal Article · Wed Dec 21 23:00:00 EST 1983 · J. Phys. Chem.; (United States)

DOI:https://doi.org/10.1021/j150644a001· OSTI ID:6970964

Nakabayashi, S; Itoh, K; Fujishima, A; Honda, K

Highly exothermic electron transfer rates were measured by semiconductor electrochemical techniques. Experiments demonstrate that the decreases in the electron transfer rates with the exothermicity of the reactions in so-called abnormal regions are much more moderate than the classical predictions, and that this is probably due to the effects of intramolecular vibrations such as C-H stretching and/or bending. 3 figures.

• Research Organization: Univ. of Tokyo, Japan
• OSTI ID: 6970964
• Journal Information: J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 87:26; ISSN JPCHA
• Country of Publication: United States
• Language: English

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ACETONITRILE
AROMATICS
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISTRY
CONDENSED AROMATICS
DATA
DEUTERIUM
DEUTERIUM COMPOUNDS
ELECTROCHEMISTRY
ELECTRON TRANSFER
EXPERIMENTAL DATA
HYDROGEN COMPOUNDS
HYDROGEN ISOTOPES
INFORMATION
ISOTOPE EFFECTS
ISOTOPES
LIGHT NUCLEI
MATERIALS
NITRILES
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
ORGANIC COMPOUNDS
ORGANIC NITROGEN COMPOUNDS
ORGANIC SULFUR COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
RADICALS
REDOX POTENTIAL
REDUCTION
SEMICONDUCTOR MATERIALS
STABLE ISOTOPES
TIME DEPENDENCE
ZINC COMPOUNDS
ZINC OXIDES