Rearrangement energy for electron transfer at semiconductor/electrolyte interface

Journal Article · Wed Aug 01 00:00:00 EDT 1984 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2115970· OSTI ID:6487729

Kobayashi, K; Okamoto, S; Sukigaru, M; Takata, M

General formulas of the rearrangement energy for the electron transfer at a semiconductor/ electrolyte interface are derived by using the dielectric continuum theory. The rearrangement energy of orientational and intramolecular vibrations of solvent and lattice vibration of the semiconductor depends not only on the distance between the electrode surface and redox ions, but also on dielectric constant of the semiconductor. Theoretical values of the rearrangement energy are compared with experimental values.

• Research Organization: Faculty of Engineering, Technological University of Nagaoka, Nagaoka, Niigata
• OSTI ID: 6487729
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 131:8; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELECTROLYTES
ELECTRON TRANSFER
ENERGY LEVELS
EXCITED STATES
INTERFACES
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
VIBRATIONAL STATES