Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition

Journal Article · Mon Jun 11 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102923· OSTI ID:6970757

Orenstein, M; Lehmen, A C.V.; Chang-Hasnain, C; Stoffel, N G; Harbison, J P; Florez, L T; Clausen, E; Jewell, J E ^[1]

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1. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (US)

A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm{sup 2} and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.

• OSTI ID: 6970757
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:24; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CURRENTS
DESIGN
ELECTRIC CURRENTS
EPITAXY
FABRICATION
ION IMPLANTATION
LASER CAVITIES
LASER MATERIALS
LASER MIRRORS
LASERS
MATERIALS
MIRRORS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT