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Amorphous silicon position sensitive neutron detector

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6969687
In this paper, the authors present an investigation of the possibility of using an a-Si:H diode, coated with an appropriate converter, as a position sensitive neutron detector. Our Monte Carlo simulation predicts that using a Gd film, 2 [mu]m thick, coated on a sufficiently thick amorphous silicon n-l-p diode, the authors can achieve a neutron detection efficiency of 25 percent. The experimental results presented give an average signal size of aoubt 12,000 e[sup [minus]] per neutron interaction, which is well above the noise and is in good agreement with the expected values. The authors can also fabricate pixel detectors with element size as small as 300 [mu]m and still register a count rate of 2200 events/sec in a typical neutron flux situation of about 10[sup 7] n/cm[sup 2]sec. The fact that these detectors are not sensitive to gamma rays, and show excellent radiation hardness, make them good candidates for applications such as neutron imaging, neutron crystallography and neutron scattering.
OSTI ID:
6969687
Report Number(s):
CONF-911106--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 39:4
Country of Publication:
United States
Language:
English