Evaporation of high T sub c Y-Ba-Cu-O superconducting thin film on Si and SiO sub 2 with a zirconia buffer layer
This patent describes a process for producing a composite consisting essentially of substrate, a zirconium dioxide film and a superconductive film having a composition represented by the formula YBa{sub x}Cu{sub y}O{sub z} where x ranges from about 1.7 to about 2.3, where y ranges from about 2.7 to about 3.3 and where z ranges from about 6.5 to about 7.0. The superconductive film having a zero resistance transition temperature of at least about 38 K. The process consists essentially of providing a silicon, oxidized elemental silicon, silicon dioxide and aluminum oxide, depositing a microscopically pore-free film ranging in thickness from about 2000 Angstroms to about 4000 Angstroms of zirconium dioxide on the substrate in a partial vacuum, heating the resulting film-carrying substrate in a partial vacuum to an annealing temperature ranging from about 450 {degrees} C. to about 850 {degrees} C, depositing by evaporation on the zirconium dioxide film Y, Ba, Cu and O in amounts required for the superconductive film. The heating being sufficient to produce the orthorhombic crystal structure in an amount sufficient to produce the superconductive film, and cooling the resulting structure in oxygen at about atmospheric pressure at a rate of less than about 5 {degrees} C. per minute which produces the superconductive film.
- Assignee:
- General Electric Co., Schenectady, NY
- Patent Number(s):
- A; US 48823112
- Application Number:
- PPN: US 7-192039--A
- OSTI ID:
- 6965329
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
ELEMENTS
EVAPORATION
FABRICATION
FILMS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
SUPERCONDUCTORS
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES