Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates

Patent · Tue Mar 27 04:00:00 EST 1990

OSTI ID:6900437

Aslam, M; Logothetis, E M; Soltis, R E

This patent describes a method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide. It comprises: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto the substrate in a thickness between about 0.1 and 3 {mu}m to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; heating the film/substrate composite to a temperature between about 800{degrees} C. and 950{degrees} C. in less than about 10 seconds; maintaining the film/substrate composite at the temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal the film; and cooling the film/substrate composite to less than 300{degrees} C. in less than about 3 minutes.

• Assignee: Ford Motor Co., Dearborn, MI
• Patent Number(s): A; US 4912087
• Application Number: PPN: US 7-181863A
• OSTI ID: 6900437
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
DEPOSITION
ELEMENTS
FABRICATION
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METAL COMPOUNDS
RUTHENIUM COMPOUNDS
RUTHENIUM OXIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
SUPERCONDUCTORS
TRANSITION ELEMENT COMPOUNDS