Experimental study of point-defect creation in high-energy heavy-ion tracks

Journal Article · Thu Mar 01 00:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.3943· OSTI ID:6963284

Perez, A ^[1]; Balanzat, E; Dural, J ^[2]

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1. Departement de Physique des Materiaux, Universite Claude Bernard (Lyon I), 43 boulevard du 11 Novembre 1918, 69622 Villeurbanne CEDEX, France (FR)
2. Centre Interdisciplinaire de Recherches avec les Ions Lourds Grand Accelerateur National d'Ions Lourds (GANIL), 8 boulevard Antoine Henri Becquerel, 14040 Caen CEDEX, France (FR)

Thin platelets of LiF crystals have been bombarded on the side with Ne (40 MeV/amu), Ar (60 MeV/amu), Kr (42 MeV/amu), and Xe (27 MeV/amu) ions at room temperature in the dose range from 10{sup 8} to 10{sup 13} ions cm{sup {minus}2}. Taking into account the large penetration depths of these high-energy ions ({congruent}1.4, 1.8, 0.6, and 0.2 mm for Ne, Ar, Kr, and Xe, respectively), it was possible to measure the depth distribution profiles of primary point defects ({ital F} centers) and aggregated defects ({ital F}{sub 2} centers) using a microspectrophotometric technique. These defects are localized in tracks surrounding the ion trajectories in which the energy is deposited by the {delta} rays emitted. Concerning the creation of primary defects, it has been shown that each individual track is saturated with {ital F} centers ({congruent}4{times}10{sup 18} {ital F} centers/cm{sup 3}). From the evolution of the {ital F} center depth profiles as a function of the ion doses, using a model of saturated tracks, it has been possible to determine the radii of the tracks all along the ion trajectories.

• OSTI ID: 6963284
• Journal Information: Physical Review, B: Condensed Matter; (USA), Vol. 41:7; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
LITHIUM FLUORIDES
DEPTH DOSE DISTRIBUTIONS
F CENTERS
ION IMPLANTATION
ARGON IONS
ELECTRICAL INSULATORS
GEV RANGE 01-10
ION CHANNELING
KRYPTON IONS
MEV RANGE 100-1000
NEON IONS
OPTICAL PROPERTIES
RADIATION EFFECTS
XENON IONS
ALKALI METAL COMPOUNDS
CHANNELING
CHARGED PARTICLES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ENERGY RANGE
EQUIPMENT
FLUORIDES
FLUORINE COMPOUNDS
GEV RANGE
HALIDES
HALOGEN COMPOUNDS
IONS
LITHIUM COMPOUNDS
LITHIUM HALIDES
MEV RANGE
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATION DOSE DISTRIBUTIONS
SPATIAL DOSE DISTRIBUTIONS
VACANCIES
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)