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Temperature-dependent optical band gap of the metastable zinc-blende structure [beta]-GaN

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]; ;  [2]
  1. Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, 78000 San Luis Potosi, SLP (Mexico)
  2. Materials Science Department, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)

The temperature-dependent (10--300 K) optical band gap [ital E][sub 0]([ital T]) of the epitaxial metastable zinc-blende-structure [beta]-GaN(001)4[times]1 has been determined by modulated photoreflectance and used to interpret low-temperature photoluminescence spectra. [ital E][sub 0] in [beta]-GaN was found to vary from 3.302[plus minus]0.004 eV at 10 K to 3.231[plus minus]0.008 eV at 300 K with a temperature dependence given by [ital E][sub 0]([ital T]) =3.302--6.697[times]10[sup [minus]4][ital T][sup 2]/([ital T]+600) eV. The spin-orbit splitting [Delta][sub 0] in the valence band was determined to be 17[plus minus]1 meV. The oscillations in the photoreflectance spectra were very sharp with a broadening parameter [Gamma] of only 10 meV at 10 K. The dominant transition observed in temperature-dependent photoluminescence was attributed to radiative recombination between a shallow donor, at [congruent]11 meV below the conduction-band edge and the valence band.

DOE Contract Number:
AC02-76ER01198
OSTI ID:
6959596
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:12; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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