Temperature-dependent optical band gap of the metastable zinc-blende structure [beta]-GaN
- Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, 78000 San Luis Potosi, SLP (Mexico)
- Materials Science Department, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
The temperature-dependent (10--300 K) optical band gap [ital E][sub 0]([ital T]) of the epitaxial metastable zinc-blende-structure [beta]-GaN(001)4[times]1 has been determined by modulated photoreflectance and used to interpret low-temperature photoluminescence spectra. [ital E][sub 0] in [beta]-GaN was found to vary from 3.302[plus minus]0.004 eV at 10 K to 3.231[plus minus]0.008 eV at 300 K with a temperature dependence given by [ital E][sub 0]([ital T]) =3.302--6.697[times]10[sup [minus]4][ital T][sup 2]/([ital T]+600) eV. The spin-orbit splitting [Delta][sub 0] in the valence band was determined to be 17[plus minus]1 meV. The oscillations in the photoreflectance spectra were very sharp with a broadening parameter [Gamma] of only 10 meV at 10 K. The dominant transition observed in temperature-dependent photoluminescence was attributed to radiative recombination between a shallow donor, at [congruent]11 meV below the conduction-band edge and the valence band.
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 6959596
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:12; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
COUPLING
ENERGY GAP
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INTERMEDIATE COUPLING
L-S COUPLING
LUMINESCENCE
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SPECTRAL REFLECTANCE
TEMPERATURE DEPENDENCE