Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N/sub 2/ discharges
TiN films were grown on (100), (110), and (111) oriented MgO by reactive magnetron sputtering from a Ti target in mixed Ar/N/sub 2/ discharges. During film growth at substrate temperatures T/sub s/ ranging from 450 to 900 /sup 0/C, an applied negative substrate bias V/sub s/ (0less than or equal toV/sub s/less than or equal to600 V) was used to vary the flux and energy of impinging Ar/sup +/ and N/sup +//sub 2/ ions. Electron channeling and transmission electron microscopy were used to show that films grown at T/sub s/greater than or equal to550 /sup 0/C were epitaxial with a defect density that decreased with increasing T/sub s/. At a constant T/sub s/ = 700 /sup 0/C, the films were found to remain epitaxial as V/sub s/ was increased from 0 to 200 V, but the crystalline quality clearly deteriorated with V/sub s/ = 400 V and at V/sub s/ = 600 V the films were polycrystalline. Energy dispersive x-ray analysis showed that the trapped Ar concentration C/sub Ar/ in the films was a function of both V/sub s/ and T/sub s/. For T/sub s/ = 700 /sup 0/C, C/sub Ar/ increased with increasing V/sub s/ to reach a maximum C/sup max//sub Ar/ at 400 V before decreasing again. The relative value of C/sup max//sub Ar/ varied with orientation in the following manner: (110)>(100)>(111). At a constant V/sub s/ = 400 V, C/sup max//sub Ar/ for (110) oriented films occurred at T/sub s/approx. =750 /sup 0/C. These results are explained based upon ion channeling efficiency as a function of film orientation and defect structure.
- Research Organization:
- Department of Physics, Linkoeping University, S-581 83 Linkoeping, Sweden
- OSTI ID:
- 6957640
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 53:13
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
MAGNESIUM OXIDES
VAPOR DEPOSITED COATINGS
TITANIUM NITRIDES
CRYSTAL DEFECTS
SPUTTERING
VAPOR PHASE EPITAXY
ARGON
CRYSTAL STRUCTURE
ELECTRIC DISCHARGES
ELECTRON CHANNELING
HIGH TEMPERATURE
MAGNETRONS
NITROGEN
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
CHANNELING
COATINGS
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FILMS
FLUIDS
GASES
MAGNESIUM COMPOUNDS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RARE GASES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies