Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFETs
- Univ. Montpellier 2 (France). Centre d'Electronique
- Centre National d'Etudes Spatiales, Toulouse (France)
The use of the 2D simulator MEDICI as a tool for Single Event Burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a [sup 252]Cf source. Current measurements have been carried out with a specially designed circuit. Simulations allow to analyze separately the effects of the ion impact and of the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage, ion's LET and by decreasing load charge. These electrical tendencies are validated by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shapes variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations.
- OSTI ID:
- 6953181
- Report Number(s):
- CONF-930704--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout
Single event burnout of power MOSFETs caused by nuclear reactions with heavy ions
Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACTINIDE ISOTOPES
ACTINIDE NUCLEI
ALPHA DECAY RADIOISOTOPES
CALIFORNIUM 252
CALIFORNIUM ISOTOPES
CHARGED PARTICLES
COMPUTERIZED SIMULATION
DATA
ELECTRICAL PROPERTIES
EVEN-EVEN NUCLEI
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
HEAVY IONS
HEAVY NUCLEI
INFORMATION
IONS
ISOTOPES
MOS TRANSISTORS
MOSFET
NUCLEI
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SIMULATION
SPONTANEOUS FISSION RADIOISOTOPES
THEORETICAL DATA
TRANSISTORS
TWO-DIMENSIONAL CALCULATIONS
YEARS LIVING RADIOISOTOPES