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Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFETs

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6953181
; ; ;  [1];  [2]
  1. Univ. Montpellier 2 (France). Centre d'Electronique
  2. Centre National d'Etudes Spatiales, Toulouse (France)

The use of the 2D simulator MEDICI as a tool for Single Event Burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a [sup 252]Cf source. Current measurements have been carried out with a specially designed circuit. Simulations allow to analyze separately the effects of the ion impact and of the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage, ion's LET and by decreasing load charge. These electrical tendencies are validated by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shapes variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations.

OSTI ID:
6953181
Report Number(s):
CONF-930704--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English