Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489237· OSTI ID:203717

Dachs, C; Palau, J M; Bruguier, G; Gasiot, J ^[1]; Roubaud, F ^[2]; Tastet, P ^[3]; Calvet, M C ^[4]; Calvel, P ^[5]

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1. Univ. Montpellier 2 (France)
2. Univ. Antilles Guyane, Kourou (French Guiana)
3. CNES, Toulouse (France)
4. Aerospatiale, Les Mureaux (France)
5. Alcatel Espace, Toulouse (France)

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEB). SEB parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p{sup +} plug modification approach for SEB hardening of power MOSFETs is validated with simulations on actual device structures.

• OSTI ID: 203717
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPUTERIZED SIMULATION
M CODES
MOSFET
PARAMETRIC ANALYSIS
RADIATION HARDENING