Heavy-ion-induced, gate-rupture in power MOSFETs
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6951822
A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6951822
- Report Number(s):
- CONF-8707112-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BURNOUT
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
ELECTRONIC CIRCUITS
FAILURE MODE ANALYSIS
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
HEAVY IONS
ION CHANNELING
IONS
MATERIALS TESTING
MOS TRANSISTORS
MOSFET
NONDESTRUCTIVE TESTING
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
TESTING
TRANSISTORS
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BURNOUT
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
ELECTRONIC CIRCUITS
FAILURE MODE ANALYSIS
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
HEAVY IONS
ION CHANNELING
IONS
MATERIALS TESTING
MOS TRANSISTORS
MOSFET
NONDESTRUCTIVE TESTING
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
TESTING
TRANSISTORS