Mechanistics of early stage growth of AlN on alumina: TMAl and NH[sub 3]
- Univ. of Washington, Seattle (United States)
The reactions of trimethylaluminum and ammonia on [gamma]-alumina were studied by Fourier transform infrared spectroscopy to explore their feasibility as precursors for the low-temperature growth of AlN thin films. Trimethylaluminum reacts with hydroxyl groups on the alumina surface to form primarily a dimethylaluminum species singly bound to oxygen. When this species is subsequently exposed to ammonia at room temperature, a weakly bound ammonia: aluminum alkyl adduct is formed, along with amide (-NH[sub 2]-) covalently bonded to aluminum, formed by the hydrogenation of one of the methyl groups. Upon heating to 820 K, the -NH[sub 2]- remains on the surface, while the ammonia and the majority of the methyl groups are desorbed. These data indicate that a stable Al-N complex can be created on alumina at room temperature; however, the reaction probability is quite low. 43 refs., 5 figs.
- OSTI ID:
- 6951292
- Journal Information:
- Chemistry of Materials; (United States), Journal Name: Chemistry of Materials; (United States) Vol. 5:3; ISSN CMATEX; ISSN 0897-4756
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
400201* -- Chemical & Physicochemical Properties
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
AMMONIA
CHALCOGENIDES
CHEMICAL PREPARATION
CHEMICAL REACTIONS
FILMS
FOURIER ANALYSIS
HYDRIDES
HYDROGEN COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SPECTROSCOPY
SYNTHESIS
TEMPERATURE EFFECTS
THIN FILMS