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An examination of the kinetics and mechanisms of the chemical vapor deposition of aluminum nitride. (Volumes I and II)

Thesis/Dissertation ·
OSTI ID:7104176

The kinetics and mechanisms of the chemical vapor deposition (CVD) of AlN[sub x]C[sub y] using diethylaluminum azide (DEAN[sub 3]), dimethylaluminum azide (DMAN[sub 3]), diethylaluminum amide (DEANH[sub 2]), and dimethylaluminum amide (DMANH[sub 2]) were examined. These reactions were investigated using mass spectrometry, temperature programmed reaction spectroscopy (TPRS), and isothermal reaction spectroscopy. Mechanistic pathways are proposed, and used to model the TPRS experimental results. The kinetic parameters for the rate limiting steps of the major reaction pathways are extracted as a result of the modeling. The azide functional groups were found to react (following first order kinetics) by liberating dinitrogen. The amide functional groups were found to be a source of hydrogen for protonolysis reactions. Also, the aluminum-amide bond was found to undergo a protonolysis reaction under certain conditions, liberating ammonia. The ethyl functional groups liberated, ethylene through [beta]-hydrogen elimination, ethane through protonolysis, and incorporated carbon through a dehydrogenation reaction. The methyl functional groups were proposed to generate methyl radicals through homolytic cleavage (the radicals presumably undergo a wall reaction to generate methane, the observed product), generate methane via protonolysis, and incorporate carbon via [alpha]-hydrogen abstraction.

Research Organization:
Minnesota Univ., Minneapolis, MN (United States)
OSTI ID:
7104176
Country of Publication:
United States
Language:
English