Reoxidized nitrided oxide for radiation-hardened MOS devices
- M.I.T. Lincoln Lab., Lexington, MA (US)
A 37 nm reoxidized nitrided oxide has been developed that exhibits zero interface state density increase, less than {minus} 1.5 V midgap voltage shift, and less than 5% degradation in inversion layer mobility after irradiation to 50 Mrad(SiO{sub 2}) with {plus minus}5 V applied to the gate. Bias annealing studies demonstrate that midgap voltage shift recovery is more rapid than in conventional hardened oxide, indicating that these dielectrics will compare even more favorably with hard oxide at lower dose rates. These experiments also indicate that the density of hole traps in reoxidized nitrided oxide is sharply peaked at both interfaces and that the same species of trap dominates trapping at both interfaces.
- OSTI ID:
- 6948345
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation effects in low-pressure reoxidized nitrided oxide gate dielectrics
Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides
Related Subjects
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CHALCOGENIDES
CURRENT DENSITY
DIELECTRIC MATERIALS
HARDENING
HOLE MOBILITY
INTERFACES
IRRADIATION
MATERIALS
MOBILITY
MOS TRANSISTORS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING