Total dose induced hole trapping in trench oxides

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6948318

Enlow, E W; Pease, R L ^[1]; Combs, W E; Platteter, D G ^[2]

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1. Mission Research Corp., Albuquerque, NM (US)
2. Naval Weapons Support Center, Crane, IN (US)

Ionization effects in polysilicon filled trenches used for component isolation in an advanced commercial bipolar technology are examined. Contact to the trench polysilicon was used to sweep the subthreshold characteristics of a parasitic trench field effect transistor formed by the trench and two buried layers. The subthreshold charge separation technique was used to analyze the buildup of trapped holes and interface states. For typical microcircuit layouts, (the trench polysilicon is ground or floating) the irradiation data at a total dose of greater than 1 Mrad(SiO{sub 2}) showed identical saturation of the threshold voltage shift and minimal interface state buildup regardless of the source and drain irradiation bias conditions. However, the radiation responses for the various irradiation bias conditions prior to saturation were significantly different. Discussions on the complex irradiation response and implications for the use of trenched bipolar microcircuits in radiation environments are provided.

• OSTI ID: 6948318
• Report Number(s): CONF-890723-; CODEN: IETNA; CNN: N00164-87-D-0010; TRN: 90-014129
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
42 ENGINEERING
FIELD EFFECT TRANSISTORS
RADIATION HARDENING
MICROELECTRONIC CIRCUITS
SILICON
ENVIRONMENTAL EXPOSURE PATHWAY
INTERFACES
TRAPPING
ELECTRONIC CIRCUITS
ELEMENTS
HARDENING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)