Impurity-induced layer-disordered buried heterostructure Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well edge-injection laser array

Journal Article · Mon Feb 16 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98209· OSTI ID:6945762

Deppe, D G; Jackson, G S; Jr, Holonyak N; Hall, D C; Burnham, R D; Thornton, R L; Epler, J E; Paoli, T L

A laser array is described that makes use of edge injection into two sides (two ''edges'') of a stack of three Al/sub x/Ga/sub 1-//sub x/As-GaAs multiple quantum well active regions. The edge-injection array is realized by impurity-induced layer disordering, which forms a higher gap Si-doped n-type emitter that edge injects electrons into either side of a stack of three lower gap multiple quantum well p-type active regions. The far-field beam divergence in the vertical direction (theta/sub perpendicular/) of the array diode is reduced from 45/sup 0/ to 15/sup 0/ as determined by the laser operation, for comparison, of one of the quantum well active regions (oxide-defined stripe geometry diode).

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6945762
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ENERGY GAP
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASERS
LAYERS
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON