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U.S. Department of Energy
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Development of stable high-efficiency polycrystalline thin film solar cells based on CuInSe/sub 2/

Technical Report ·
OSTI ID:6928067

CuInSe/sub 2//CdS cells have been made with a variety of back contacts and with single and double layers of CuInSe/sub 2/. An improvement in fill factor and open circuit voltage was achieved by using a Mo/Pt back contact. Subsequently it was shown that the same performance could be obtained by lowering the substrate temperature during the CuInSe/sub 2/ deposition. Cells of about 8% efficiency have been made and with short circuit currents of up to 40 mA/cm/sup 2/. CdTe films have been grown with and without intentional doping to yield high resistivity p-type material in the as deposited conditions. Subsequent air heat treatments and annealing in a Te overpressure have been successfully used to lower the resistivity by one or two orders of magnitude. Material characterization studies on the CdTe films are reported.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6928067
Report Number(s):
SERI/STR-211-2232; ON: DE84004484
Country of Publication:
United States
Language:
English