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Chemically prepared Pb(Zr,Ti)O[sub 3] thin films: The effects of orientation and stress

Conference ·
OSTI ID:6925980

We have determined the effects that orientation and stress have on chemically prepared Pb(Zr,Ti)0[sub 3] (PZT) film properties. Systematic modification of the underlying substrate technology has permitted us to fabricate suites of films that have various degrees of orientation at a constant stress level, and to also fabricate films that are in different states of stress, but have similar orientation. We have fabricated highly oriented films of the following compositions: PZT 60/40, PZT 40/60 and PZT 20/80. Remanent polarizations ([approx]60 [mu]C/cm[sup 2]) greater than the best bulk polycrystalline ferroelectrics were obtained for PZT 40/60 films that were under compression and highly (001) oriented. While we show that systematically varying orientation influences ferroelectric properties, film stress also has a considerable effect. Perhaps the most important concept presented in this paper is that the sign of the film stress at the Curie point controls the type of ferroelectric behavior exhibited by PZT thin films. Further, our stress measurements as a function of thermal history indicate that the coefficient of thermal expansion of the paraelectric state is critical in determining the type of film ferroelectric behavior.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6925980
Report Number(s):
SAND-92-2111C; CONF-9208197--1; ON: DE93004501
Country of Publication:
United States
Language:
English