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Superconducting properties of HTSC thin films prepared in situ by single target deposition--

Journal Article · · International Journal of Modern Physics B; (USA)
; ; ; ; ; ; ; ;  [1]; ;  [2];  [3];  [4]
  1. Kernforschungszentrum Karlsruhe GmbH (Germany, F.R.). Inst. fuer Nukleare Festkoerperphysik
  2. Peking Univ., Beijing, (CN)
  3. Academia Sinica, Beijing, BJ (China). Inst. of Physics (China)
  4. Komenskeho Univ., Bratislava (Czechoslovakia)

Thin films of ReBaCuO (Re = Y,Gd) and of BiCaSrCuO have been deposited onto Al{sub 2}O{sub 3}, MgO, SrTio{sub 3}, Si and ZrO{sub 2} substrates by planar and inverted cylindrical magnetron sputtering. The main advantage of this preparation technique is the high reproducibility allowing detailed and systematic studies of the film properties as a function of deposition parameters. Optimum deposition parameters were a high oxygen partial pressure of 2 {times} 10{sup {minus} 1} Torr in an oxygen-argon mixture and substrate temperatures near 800 {degrees} C. Except for the substrate Si the films grow highly textured on all substrates. For the 1-2-3 material zero resistance is obtained near 90 K for the case of textured growth. For Si the best film showed zero resistance near 84 K. High critical currents between 4 {times} 10{sup 5} and 5.5 {times} 10{sup 6} A/cm{sup 2} were determined for films of the 1-2-3 material on the substrates MgO, ZrO{sub 2} and SrTiO{sub 3}. On films SrTio{sub 3} tunnel junctions with Pb and In counterelectrodes could be prepared which showed a gap-like feature in their current-voltage characteristic. These junctions could be prepared with great reproducibility and experimental arguments could be provided which show that this gap-like feature is due to a superconducting density of states effect. First results are presented on YBaCuO thin films which were deposited by a novel ablation device which uses a pulsed electron beam instead of the laser beam.

OSTI ID:
6925639
Journal Information:
International Journal of Modern Physics B; (USA), Journal Name: International Journal of Modern Physics B; (USA) Vol. 3:6; ISSN 0217-9792; ISSN IJPBE
Country of Publication:
United States
Language:
English

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