Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys
Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6916522
- Report Number(s):
- SAND-92-2006C; CONF-9208165-1; ON: DE93000714
- Resource Relation:
- Conference: 5. international conference on high pressure in semiconductor physics, Kyoto (Japan), 18-21 Aug 1992
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
DEFECTS
PRESSURE EFFECTS
GALLIUM PHOSPHIDES
ALLOYS
ELECTRON CAPTURE
ELECTRON EMISSION
ELECTRONIC STRUCTURE
OSCILLATION MODES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
CAPTURE
EMISSION
GALLIUM COMPOUNDS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION EFFECTS
360602* - Other Materials- Structure & Phase Studies
665000 - Physics of Condensed Matter- (1992-)