Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys

Conference · Thu Oct 01 00:00:00 EDT 1992

OSTI ID:10186277

Samara, G A

Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10186277
• Report Number(s): SAND-92-2006C; CONF-9208165-1; ON: DE93000714
• Resource Relation: Conference: 5. international conference on high pressure in semiconductor physics,Kyoto (Japan),18-21 Aug 1992; Other Information: PBD: [1992]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
PRESSURE EFFECTS
DEFECTS
GALLIUM PHOSPHIDES
ELECTRONIC STRUCTURE
SEMICONDUCTOR MATERIALS
ELECTRON EMISSION
ELECTRON CAPTURE
OSCILLATION MODES
ALLOYS
PHYSICAL RADIATION EFFECTS
360602
665000
STRUCTURE AND PHASE STUDIES
PHYSICS OF CONDENSED MATTER