Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition

Journal Article · Mon Mar 05 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103323· OSTI ID:6910875

Isobe, C; Saitoh, M ^[1]

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1. Sony Corporation Research Center, 174 Fujitsukacho, Hodogayaku, Yokohama 240, Japan (JP)

Effects of the heat treatment in flowing oxygen containing ozone of 0.5--1 vol % (O{sub 3} annealing) on the dielectric properties of the Ta{sub 2}O{sub 5} thin film (100--200 A) grown on the Si substrate by the chemical vapor deposition method were investigated. The leakage current was drastically reduced from more than 10{sup {minus}3} to 10{sup {minus}9} A/cm{sup 2} in an electric field of 3 MV/cm by the O{sub 3} annealing at 400 {degree}C. It was also found that the leakage current was decreased and increased reversibly between alternate O{sub 3} annealing and O{sub 2} annealing (without ozone). These two states of the leakage current can be attributed to the reproducible change of the oxygen vacancies in the Ta{sub 2}O{sub 5} film.

• OSTI ID: 6910875
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:10; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ANNEALING
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELEMENTS
EXPERIMENTAL DATA
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
LEAKAGE CURRENT
NONMETALS
NUMERICAL DATA
OXIDES
OXYGEN
OXYGEN COMPOUNDS
OZONE
REFRACTORY METAL COMPOUNDS
SURFACE COATING
TANTALUM COMPOUNDS
TANTALUM OXIDES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
VAPOR DEPOSITED COATINGS