Integration of high-dielectric constant Ta{sub 2}O{sub 5} oxides on diamond for power devices
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China)
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
- Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
The authors report on the direct integration of high-dielectric constant (high-k) Ta{sub 2}O{sub 5} films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase {delta}-Ta{sub 2}O{sub 5} film is achieved on diamond by annealing the amorphous Ta{sub 2}O{sub 5} film deposited by a sputter-deposition technique. The electrical properties of the Ta{sub 2}O{sub 5} thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10{sup -8} A/cm{sup 2} for the as-deposited amorphous Ta{sub 2}O{sub 5} film and 10{sup -2} A/cm{sup 2} for the crystallized film, which is 10{sup 8} and 10{sup 2} times lower than that of the Schottky diode at a forward bias of -3 V, respectively. The dielectric constant of the amorphous Ta{sub 2}O{sub 5} films is measured to be 16 and increases to 29 after annealing at 800 Degree-Sign C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta{sub 2}O{sub 5} thin films.
- OSTI ID:
- 22089583
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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