Observation of enhanced single longitudinal mode operation in 1. 5-. mu. m GaInAsP erbium-doped semiconductor injection lasers
We propose a new type of current injection semiconductor laser with rare-earth dopant in the active layer for achieving stable, single longitudinal mode operation. In this laser, the rare-earth/semiconductor combination is chosen such that the wavelengths of the dominant emission from the trivalent rare-earth ion internal 4f-4f transitions are shorter than that of the band-edge emission of the host semiconductor. Spectrally, the narrow optical gain due to the rare-earth ion transition will superimpose on top of the broad gain peak of the host semiconductor. Such laser diodes will attain lasing action at the rare-earth transition wavelength resulting in single longitudinal mode operation with conventional Fabry--Perot cavity. Furthermore, reproducible precise lasing wavelength insensitive to temperature variation should be possible. Such a proposed rare-earth/semiconductor injection laser was investigated with erbium doping in the GaInAsP (lambda = 1.55 ..mu..m) active layer of the heteroepitaxial ridge-overgrown laser. Stable, single longitudinal mode operation at 15 322 A was obtained. Furthermore, this lasing line shifted at a slow rate of approx. <1 A//sup 0/C with heat-sink temperature. Initial results do appear to confirm this new proposed rare-earth/semiconductor laser operation scheme.
- Research Organization:
- AT and T Bell Laboratories, Holmdel, New Jersey 07733
- OSTI ID:
- 6908925
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ERBIUM IONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONS
LASERS
MODE LOCKING
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS