Wavelength-resonant surface-emitting semiconductor laser
This patent describes a semiconductor laser medium. It comprises: pumping means for providing energy, a resonating gain medium for receiving the energy whereby standing electromagnetic waves are generated therein and composed of a first plurality of thin semiconductor bodies each acting as a quantum well of small bandgap and each equally separated from the other by a space, and a second plurality of thick semiconductor bodies, each thick body with a bandgap substantially larger than the small bandgap and occupying the space between adjacent ones of the first semiconductor bodies, both of the pluralities of bodies thereby constituting a stack of thick and thin semiconductor bodies alternately oriented along a line, the thickness of each of the thin semiconductor bodies in the direction of the line being at most approximately one-tenth the thickness of each of the thick semiconductor bodies and the combined thickness of a pair of adjacent thin and thick bodies being approximately equal to an integral multiple of one-half the lasing wavelength of the medium. Whereby each of the maxima of the standing waves of the electromagnetic field of the medium are in approximate registration with each of the thin semiconductor bodies.
- Assignee:
- Univ of New Mexico, Albuquerque, NM
- Patent Number(s):
- US 4881236; A
- Application Number:
- PPN: US 7-184745A
- OSTI ID:
- 6908817
- Resource Relation:
- Patent File Date: 22 Apr 1988
- Country of Publication:
- United States
- Language:
- English
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