Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium

Journal Article · Mon Oct 31 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99795· OSTI ID:6772502

Raja, M Y.A.; Brueck, S R.J.; Osin-acute-accentski, M; Schaus, C F; McInerney, J G; Brennan, T M; Hammons, B E

A novel surface-emitting semiconductor laser with a vertical resonator, extremely short gain length, and enhanced gain at a specific design wavelength has been demonstrated. The gain medium consists of a series of GaAs quantum wells separated by AlGaAs spacers whose thicknesses are chosen to be one-half the wavelength of a particular transition in the quantum wells. This structure forces the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the gain and frequency selectivity in the vertical direction and substantially reducing amplified spontaneous emission. We have achieved optically pumped lasing with a threshold of 6 MW/cm/sup 2/ at room temperature in a molecular beam epitaxially grown structure of thickness 4.3 ..mu..m, of which only 320 nm provided gain.

• Research Organization: Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
• OSTI ID: 6772502
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
DESIGN
DIMENSIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS