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Saturation of inter-subband transitions in p-type semiconductor quantum wells

Conference · · AIP Conference Proceedings (American Institute of Physics); (USA)
OSTI ID:6908761
 [1];  [2]
  1. University of Illinois at Urbana-Champaign, Urbana, IL 61801 (US)
  2. Sandia National Laboratories, P.O. Box 969, Livermore, (CA)
Saturation behavior of inter-subband optical transition in p-type semiconductor quantum wells is examined theoretically. Carrier-phonon scatterings are taken into account within the deformation-potential approximation. Deviation of the hole distribution from thermal equilibrium due to optical pumping is calculated by solving coupled rate equations. Pump-and-probe absorption spectra are also studied and possible applications for light-by-light modulation are discussed.
OSTI ID:
6908761
Report Number(s):
CONF-8810399--; CNN: ONR-N00014-81-K-430
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Journal Volume: 191:1
Country of Publication:
United States
Language:
English

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