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Saturation of intersubband transitions in /ital p/-type semiconductor quantum wells

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
Saturation behavior of intersubband optical transitions in /ital p/-typesemiconductor quantum wells is examined theoretically with the multibandeffective-mass model. Carrier-phonon scatterings are taken into account withinthe deformation-potential approximation. Deviation of the hole distributionfrom thermal equilibrium due to optical pumping is calculated by solvingcoupled rate equations. Pump-and-probe absorption spectra are also studied, andpossible applications for light-by-light modulation are discussed.
Research Organization:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801(US); Theoretical Division, Sandia National Laboratories, P.O. Box 969, Livermore, California 94550
OSTI ID:
6388293
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:17; ISSN PRBMD
Country of Publication:
United States
Language:
English