Atomic force microscopy, lateral force microscopy, and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms
- Department of Chemical and Nuclear Engineering, University of New Mexico, 209 Farris Engineering Center, Albuquerque, New Mexico 87131 (United States)
- Microelectronics Development Laboratory, Sandia National Laboratories, MS 1084, P.O. Box 5800, Albuquerque, New Mexico 87185-5800 (United States)
We investigated various interactions between alumina and tungsten films that occur during chemical mechanical polishing (CMP). Atomic force microscopy surface topography measurements of post-CMP tungsten indicate that the roughness of the tungsten is independent of polish pressure and rotation rate. Pure mechanical abrasion is therefore an unlikely mechanism of material removal during CMP. Transmission electron microscopy images corroborate these results. The adhesion force between alumina and tungsten was measured in solution. The adhesive force increased with KIO{sub 3} concentration. Friction forces were measured in solution using lateral force microscopy. The friction force in buffered solutions was independent of KIO{sub 3} concentration. These results indicate that interactions other than purely mechanical interactions exist during CMP. {copyright} {ital 1999 Materials Research Society.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 690702
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 9 Vol. 14; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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