Adsorption controlled molecular beam epitaxy of rubidium barium bismuth oxide

Journal Article · Thu Mar 01 04:00:00 EST 1990 · Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA)

DOI:https://doi.org/10.1116/1.585064· OSTI ID:6905997

Hellman, E S; Hartford, E H ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

Measurements of the sticking coefficients for rubidium, barium, and bismuth have been made during molecular beam epitaxy of (Rb,Ba)BiO{sub 3} on MgO. This simple cubic perovskite is a high temperature superconductor for Rb fractions between 0.4 and 0.5. The dependence of the sticking coefficients on substrate temperature, oxygen plasma conditions, and on incident flux composition indicate that in a narrow region of flux compositions, adsorption, and desorption rates of bismuth and rubidium will control the stoichiometry of the film.

• OSTI ID: 6905997
• Journal Information: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Journal Name: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA) Vol. 8:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALI METAL COMPOUNDS
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
BISMUTH COMPOUNDS
BISMUTH OXIDES
CHALCOGENIDES
CHEMICAL REACTION KINETICS
EPITAXY
FILMS
KINETICS
MOLECULAR BEAM EPITAXY
OXIDES
OXYGEN COMPOUNDS
REACTION KINETICS
RUBIDIUM COMPOUNDS
RUBIDIUM OXIDES
STOICHIOMETRY
SUBSTRATES
SUPERCONDUCTING FILMS