Wigner crystallization in the fractional quantum Hall regime: A variational quantum Monte Carlo study

Journal Article · Mon Jan 18 00:00:00 EST 1993 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.70.335· OSTI ID:6905224

Zhu, X; Louie, S G ^[1]

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1. Department of Physics, University of California, Berkeley, California 94720 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

Using a variational quantum Monte Carlo method, we study the two-dimensional Wigner crystal induced by a strong magnetic field in the fractional quantum Hall effect regime. Effects of exchange, intra-Landau-level correlation, and inter-Landau-level mixing on the total energy and their dependence on the carrier mass and magnetic field strength are calculated. Our results support that the recently observed reentrant behavior to an insulating phase around [nu]=1/3 in [ital p]-doped GaAs/AlGaAs is a consequence of an increased stability of the Wigner crystal due to the effects of Landau-level mixing.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6905224
• Journal Information: Physical Review Letters; (United States), Vol. 70:3; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
CRYSTALLIZATION
DOPED MATERIALS
HALL EFFECT
MAGNETIC FIELDS
MONTE CARLO METHOD
P-TYPE CONDUCTORS
PHASE STUDIES
VARIATIONAL METHODS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
JUNCTIONS
LEPTONS
MATERIALS
PHASE TRANSFORMATIONS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
360606* - Other Materials- Physical Properties- (1992-)