Reentrant v = 1 quantum Hall state in a two-dimensional hole system.
Journal Article
·
· Physical Review Letters
- Materials Science Division
We report the observation of a reentrant quantum Hall state at the Landau level filling factor {nu} = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the {nu} = 1 quantum Hall state in the presence of a parallel magnetic field component B{parallel}, followed by a strengthening and reemergence as B{parallel} is further increased. The robustness of the {nu} = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B{parallel} needed to invoke the transition increases with the total density of the system.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1039515
- Report Number(s):
- ANL/MSD/JA-71904
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 17 Vol. 107; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- ENGLISH
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