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Sputtered thin film YBa sub 2 Cu sub 3 O sub n

Conference · · AIP Conference Proceedings (American Institute of Physics); (USA)
OSTI ID:6905223
 [1]; ;  [2]; ; ; ; ;  [3]
  1. Center for Chemical Technology (USA)
  2. Institute for Materials Science Gaithersburg, MD 20899 (USA) Engineering, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA)
  3. CINVESTAV-IPN, U. Merida, A.P. 73 Cordemex, Yucatan 97310, Mexico (USA)
This study was carried out to determine the effect of substrate temperature, target to substrate angle, and the partial pressure of oxygen in the sputtering atmosphere on the stoichiometry of the deposition. Films were deposited by a planar magnetron sputtering of stoichiometric 1:2:3 pressed and sintered targets on MgO, ZrO{sub 2} (Y) and ZrO{sub 2} coated Al{sub 2}O{sub 3} substrates. EDX and WDS were used to determine the chemical composition of the thin films. X-ray diffraction was used to identify the structure after film crystallization at 1175 K and oxidation at 800 K. The partial pressure of oxygen appears to have the most profound effect on the stoichiometry by lowering the barium content. Negative ion resputtering of the growing film apparently also slows film growth rate. Films deposited on alumina circuitboard with a ZrO{sub 2} barrier layer have demonstrated sharp transitions to superconducting behavior at 95 K when the stoichiometric ratio is preserved.
OSTI ID:
6905223
Report Number(s):
CONF-881035--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Journal Volume: 182:1
Country of Publication:
United States
Language:
English