Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs

Journal Article · Sat Jul 15 04:00:00 EDT 1995 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.360764· OSTI ID:69042

Jencic, I; Bench, M W; Robertson, I M ^[1]; Kirk, M A ^[2]

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1. University of Illinois, Department of Materials Science and Engineering, 1304 West Green Street, Urbana, Illinois 61801 (United States)
2. Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

An energetic electron beam has been used to stimulate crystallization of spatially isolated amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was found that crystallization was induced even when the energy of the electron beam was less than that required to create point defects in the crystalline structure. The rate of crystallization depended on the material and on the electron energy. In all materials, the rate decreases as the electron energy increases from 50 keV (the lowest electron energy used), reaching a minimum value at an electron energy slightly below the displacement threshold voltage. Above the displacement threshold, the regrowth rate again increases with increasing electron energy. The possible role of electron-beam heating was studied both theoretically and experimentally. Calculations suggested heating effects were negligible and this was confirmed by {ital in} {ital situ} ion implantations and electron irradiations performed at 30 K, where subthreshold electrons stimulated crystallization. The subthreshold and low-temperature results are consistent with the model that the crystallization process is dependent on the creation of defects (dangling bonds and kinks) at the crystalline-amorphous ({ital c}-{ital a}) interface. The crystallization stimulated by the subthreshold electron beams suggests that electronic excitation of the bonds along the {ital c}-{ital a} interface can induce the amorphous to crystalline transition. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439; W-31109-ENG-38
• OSTI ID: 69042
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CRYSTALLIZATION
ELECTRON BEAMS
ENERGY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
GERMANIUM
KEV RANGE 10-100
SILICON
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K