Evidence for electronic energy loss processes stimulating solid phase epitaxial regrowth of spatially isolated amorphous regions in semiconductor systems

Conference · Sun Jan 01 04:00:00 EST 1995

OSTI ID:50954

Jencic, I; Robertson, I M ^[1]; Bench, M W ^[2]; Kirk, M A ^[3]

---

1. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering
2. Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Materials Science
3. Argonne National Lab., IL (United States)

Solid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphous-crystalline interface.

• Research Organization: Illinois Univ., Urbana, IL (United States). Dept. of Materials Science and Engineering; Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-91ER45439; W-31109-ENG-38
• OSTI ID: 50954
• Report Number(s): ANL/MSD/CP--85469; CONF-941144--135; ON: DE95009892
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
ELECTRON BEAMS
ELECTRON COLLISIONS
ENERGY LOSSES
EPITAXY
GALLIUM PHOSPHIDES
GERMANIUM
SILICON