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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, large area amorphous silicon based solar cells

Technical Report ·
OSTI ID:6895124
; ; ; ; ; ; ; ;  [1]; ;  [2]
  1. Solarex Corp., Newtown, PA (USA). Thin Film Div.
  2. Drexel Univ., Philadelphia, PA (USA)
This document presents the results of studies in three areas: materials research, non-semiconductor materials research, and submodule research. In materials research, hydrogen dilution of a SiGe:H alloys improved alloys homogeneity and reduced light-induced degradation. Performance improvements were made in both microcrystalline and amorphous doped films, and a method was demonstrated that appears to overcome nucleation and film growth problems by recrystallizing the amorphous n-layer. In non-semiconductor materials research, ITO/Ag production was scaled up to successfully coat 1000-cm{sup 2} submodules. Work on atmospheric chemical vapor deposition of zinc oxide produced 2-{mu}m-thick films with 50--80 {Omega}/sq. sheet resistance. In submodule research, all processes were scaled up and single-junction submodules were prepared with 9.9% aperture-area conversion efficiencies. Triple-junction submodules were produced with 8.98% aperture-area efficiencies, and laser scribing was improved to allow only a 2% loss in area. Modeling was used to optimize module performance by predicting parasitic losses given the material constraints of a given device design. Modules were laser patterned to define an array of small-area devices, and topographic maps were produced to alloy visualization of both isolated defects and performance gradients. 27 refs., 41 figs., 7 tabs.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Solarex Corp., Newtown, PA (USA). Thin Film Div.
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6895124
Report Number(s):
SERI/TP-211-3906; ON: DE90000356; CNN: ZB-7-06003-2
Country of Publication:
United States
Language:
English