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U.S. Department of Energy
Office of Scientific and Technical Information

Research on stable, large-area, amorphous silicon based submodules

Technical Report ·
OSTI ID:6710484
This research program encompasses materials research, non- semiconductor materials research, and submodule research. Researchers studied the materials' considerations that limit transport in the a-SiGe:H alloys, and developed alloys with improved properties. These studies indicated that the homogeneity of the alloy plays an important role in determining electronic properties. P-type a-SiC:H films were also prepared using trimethylboron as a dopant. The conductivity of the films was about an order of magnitude better than the comparable bandgap diborane-doped film. This allowed devices with improved voltage (0.943 V) to be demonstrated. Scientists also investigated the optimum device structures for the bottom, a-SiGe:H cell. This study concluded that grading the i-regions is an important element in obtaining the best performance, but the results differ significantly from those reported elsewhere. The results of this study have been incorporated in a number of tandem and triple-junction devices that have resulted in efficiencies in the range of 10--11%. A laser-scribing process for the highly reflecting ITO/Ag rear contact has enabled the cell results to be transferred to prototype modules with conversion efficiencies between 9% and 10%. 23 refs., 51 figs., 8 tabs.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Solarex Corp., Newtown, PA (USA). Thin Film Div.
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6710484
Report Number(s):
SERI/TP-211-3805; ON: DE90000339
Country of Publication:
United States
Language:
English