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Title: Nature of hole doping in Nd[sub 2]NiO[sub 4] and La[sub 2]NiO[sub 4]: Comparison with La[sub 2]CuO[sub 4]

Journal Article · · Physical Review, B: Condensed Matter; (United States)
;  [1]; ;  [2];  [1]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. AT T Bell Laboratories, Murray Hill, New Jersey 07974-2070 (United States)

To elucidate the hole doping mechanism, we have systematically studied the Ni and Cu [ital K]-edge x-ray-absorption spectra in doped Nd[sub 2]NiO[sub 4], La[sub 2]NiO[sub 4], and La[sub 2]CuO[sub 4]. We find a significant difference in the character of the doped hole between the nickelates and cuprate. We observe that both strontium substitution and introduction of excess oxygen lead to a shift of the Ni absorption edge to higher energies, by nearly 3 eV in NaSrNiO[sub 4]. This result demonstrates that the doped holes, in addition to the O 2[ital p] character, have a substantial amount of Ni 3[ital d] character (30--40 %). The intensity of the 1[ital s]-3[ital d] transition increases upon doping, consistent with increasing number of [ital d] holes. In contrast, the Cu absorption edge in the doped cuprate is shifted by much smaller amounts, indicative of a lower amount of Cu 3[ital d] character for the doped hole. The strongly mixed Ni 3[ital d] and O 2[ital p] character of the doped hole distinguishes the electronic structure of the nickelate from that of the cuprate.

DOE Contract Number:
AC02-76CH00016; AS05-80ER10742
OSTI ID:
6891371
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 47:18; ISSN 0163-1829
Country of Publication:
United States
Language:
English