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Title: A photoemission investigation of the SnO[sub 2]/CdS interface: A front contact interface study of CdS/CdTe solar cells

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.352748· OSTI ID:6890229
 [1]; ;  [2]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393 (United States)
  2. Sychrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097 (United States)

A frequently used front contact in CdS/CdTe heterojunction solar cells is SnO[sub 2]. We have performed a soft x-ray synchrotron radiation photoemission investigation of the formation and thermal stability of the SnO[sub 2]/CdS interface in an attempt to understand how device processing influences this interface. The most important results are that (1) the CdS and SnO[sub 2] do not interact chemically, even after annealing to 400 [degree]C, (3) the first [similar to]16 A CdS deposited on polycrystalline SnO[sub 2] grows in a layer-by-layer mode, (3) subsequent CdS layers agglomerate, forming a topologically rough surface, (4) diffusion of Sn, Cd, and S across the interface does not occur, (5) annealing a CdS thin film grown at room temperature on SnO[sub 2] to 400 [degree]C enhances the agglomeration, and (6) the near coincidence of the conduction-band minimum across the interface facilitates ohmic contact between [ital n]-type CdS and [ital n]-type SnO[sub 2].

DOE Contract Number:
AC02-83CH10093
OSTI ID:
6890229
Journal Information:
Journal of Applied Physics; (United States), Vol. 73:9; ISSN 0021-8979
Country of Publication:
United States
Language:
English