Evolution of the in-gap state in high-[ital T][sub [ital c]] cuprates

Journal Article · Tue Dec 01 04:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.46.14022· OSTI ID:6889938

Ohta, Y; Tsutsui, K; Koshibae, W; Shimozato, T; Maekawa, S ^[1]

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1. Department of Applied Physics, Nagoya University, Nagoya 464-01 (Japan)

An exact diagonalization technique on small lattices is used to calculate the single-particle spectral function [ital A]([bold k],[omega]) for one- and three-band Hubbard models at various parameter values and doping rates, thereby examining the low-energy electronic structure (or in-gap state) of the doped CuO[sub 2] plane in high-[ital T][sub [ital c]] superconducting cuprates. It is illustrated that, by carrier doping, the dispersive state of the charge excitation gap at half filling undergoes a strongly momentum-dependent spectral-weight transfer, and evolves into the new state with a free-electron-like dispersion that forms the in-gap state characteristic of a large Fermi surface consistent with Luttinger's sum rule. The quasiparticlelike band narrowing observed is shown to depend sensitively on the parameter values and doping rate.

• OSTI ID: 6889938
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:21; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

665411* -- Basic Superconductivity Studies-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
CRYSTAL MODELS
CUPRATES
DOPED MATERIALS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY LEVELS
FERMI LEVEL
HUBBARD MODEL
MATERIALS
MATHEMATICAL MODELS
OXIDES
OXYGEN COMPOUNDS
QUASI PARTICLES
TRANSITION ELEMENT COMPOUNDS