Effective Coulomb interactions between doped carriers in the high-{ital T}{sub {ital c}} cuprates

Journal Article · Mon May 01 04:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.51.12797· OSTI ID:44585

Feiner, L F ^[1]; Jefferson, J H; Raimondi, R ^[2]

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1. Philips Research Laboratories, Professor Holstlaan 4, 5656AA Eindhoven (Netherlands)
2. DRA Electronics Sector, St. Andrews Road, Great Malvern, Worcestershire WR143PS (United Kingdom)

We study the residual interactions between doped particles that result when the three-band {ital d}-{ital p} model, representing the CuO{sub 2} planes, is mapped onto an effective single-band Hubbard model. The copper-oxygen Coulomb repulsion {ital V}{sub {ital p}{ital d}} is shown to induce an effective interaction that is always repulsive between doped electrons, but can be attractive between doped holes if hybridization is sufficiently strong. The attraction is suppressed by the intra-atomic oxygen Coulomb repulsion {ital U}{sub {ital p}}. For realistic cuprate parameters attraction is unlikely, though certain approximations may give the opposite result. We discuss the consequences upon further mapping to a spin-charge ({ital t}-{ital J}-{ital V}) model.

• OSTI ID: 44585
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 18 Vol. 51; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CARRIER DENSITY
COULOMB FIELD
DOPED MATERIALS
HIGH-TC SUPERCONDUCTORS
HUBBARD MODEL
HYBRIDIZATION
INTERATOMIC FORCES
OXYGEN