Si-depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradation

Journal Article · Sun Jan 15 04:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343069· OSTI ID:6887428

van IJzendoorn, L J; Schellekens, J P.W.

The reaction of a silicon-containing vapor with a photoresist layer, as used in some dry developable lithographic processes, was studied with Rutherford backscattering spectrometry. Degradation of the polymer layer under ion beam irradiation was observed, but it was found that this had no influence on the shape of the Si-depth profile and the total areal density. The RBS measurements were also verified with secondary ion mass spectrometry measurements. To describe the degradation process that occurs in polymeric layers upon ion beam exposure, elastic recoil detection measurements were carried out on polystyrene layers. Only one dose-independent cross section for carbon and only one for hydrogen were needed to describe the degradation behavior.

• Research Organization: Philips Research Laboratories, P. O. Box 80 000, 5600 JA Eindhoven, The Netherlands
• OSTI ID: 6887428
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360604 -- Materials-- Corrosion
Erosion
& Degradation
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
ELEMENTS
ETCHING
ION BEAMS
MASS SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
POLYMERS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE FINISHING